uwp barcode generator

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Block # 10

in which the capacitors C and Ccs in (12.71) and (12.73) are simply replaced by the capacitors Cin and Cout, respectively. In low-frequency cases the expressions (12.92) and (12.93) revert to the previous equations (12.74) and (12.75). 12.4.5 Emitter Degeneration Figure 12.12 shows a bipolar device with a CE con guration and emitter degeneration. Its model is simpli ed by the additional negligence of C . Then, the equivalent model of the bipolar transistor with a CE con guration shown in Figure 12.12(b) is simpli ed to Figure 12.13. KCL at node E ve ve + io( Rc // Ccs ) + = gm v1 + ib, Re ro KCL at node C io + KVL at input loop ib = vi ve , r // C (12.96) (12.97) ve + io( Rc // Ccs ) = gm v1, ro (12.95) (12.94)

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83 M Khare, X Guo, W Wang, TP Ma, G Cui, T Tamagawa, B Halpern, and J Schmitt, "Ultra-Thin Silicon Nitride Gate Dielectric for Deep-Sub-Micron CMOS Devices," Tech Digest 1997 Symp VLSI Technoiogy, June 1997, p 51 84 C Bowen, C L Fernando, G Klimeck A Chatterjee, R Lake, D Blank, J Davis, M Kulkarni, S Hattangady, and I-C Chen, "Physical Oxide Thickness Extraction and Verification using Quantum Mechanic,l Simulation," Tech Digest 1997 IEDM, Dec 1997, p 869 85, Z Lemnios, "Manufacturing Technology Challenges for Low Power Electronics," Tech Digest 1995 Symp VLSI Technology, Jane 1995, p 5 86, R-H Yan, D Monroe, J Weis, A Mujtaba, and E Westerwick, "Reducing Operating Voltage from 3, 2, to I Volt and Below--- Challenges and Guidelines for Possible Solutions," Tech Digest 1995 IEDM Dec 1995, p 55 87 A Chatterjee, M Nandakumar, and I-C.

We already see that the transform cannot be unique since by multiplying an already computed matrix T with an arbitrary unitary matrix, property (5.48) is preserved. The covariance matrix can be decomposed as follows (KLT):

Chen, "An Investigation of the Impact of Technology Scaling on Power Wasted as Short-Circuit Current in Low Voltage Static CMOS Circuits," Tech Digest 1996 Inter Symp Low Power Electronics and Design, Aug 1996, p 145 88 M Nandakumar, A Chatterjee, G Stacey, and I-C Chen, "A 025 jim Gate Length CMOS Technology for IV Low Power Applications - Device Design and Power/ Performance Considerations," Tech Digest 1996 Symp VLSI Technology, June 1996, p 68 89 Z Chen, C Diaz, J Plummer, M Cao and W Greene, "018 Am Dual VT MOSFET Process and Energy-Delay Measurement," Tech Digest 1996 IEDM, Dec 1996, p 851 90 S Thompson, I Young, J Greason ard M Bohr, "Dual Threshold Voltages and Substrate Bias: Keys to High-performance, Low Power, 01 pm Logic Designs," Tech Digest 1997 Symp VLSI Technology, June 1997, p 69 91 W Lee, P Landman, B Barton, S.